unisonic technologies co., ltd utd20n03 power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2009 unisonic technologies co., ltd qw-r502-342.a n-channel enhancement mode power m osfet ? features * ambient operating temperature: 175c * low drain-source and low on-resistance * logic level * perfect gate charge r ds(on) product * superior thermal resistance * avalanche rated * specified dv/dt * for fast switching buck converters * halogen free ? symbol ? ordering information pin assignment ordering number package 1 2 3 packing UTD20N03G-TN3-R to-252 g d s tape reel
utd20n03 power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-342.a ? absolute maximum ratings (t j = 25 c, unless otherwise specified)) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gs 20 v continuous drain current (t c =25c) i d 30 a pulsed drain current (t c =25c) i dm 120 a single pulsed (note 2) e as 15 mj avalanche energy repetitive (note 3) e ar 6 mj peak diode recovery dv/dt (note 4) dv/dt 6 kv/s power dissipation (t c =25c) p d 60 w junction temperature t j +175 c storage temperature t stg -55 ~ +175 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. i d =15 a, v dd =25 v, r gs =25 ? 3. repetitive rating: pulse width limited by t j 4. i s =30 a, v ds =24 v, di/dt =100a/s,t j(max) = 175 c ? thermal data parameter symbol min typ max unit junction to ambient ja 100 c/w junction to case jc 1.7 2.5 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =1 ma 30 v drain-source leakage current i dss v ds =30 v,v gs =0 v 0.01 1 a gate-source leakage current i gss v gs =20 v, v ds =0 v 1 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =25a 1.2 1.6 2 v v gs =4.5 v, i d =15 a 22.9 31 m ? drain-source on-state resistance r ds(on) v gs =10 v, i d =15 a 15.5 20 m ? dynamic parameters input capacitance c iss 530 700 pf output capacitance c oss 200 275 pf reverse transfer capacitance c rss v ds =25 v, v gs =0 v, f =1mhz 60 90 pf gate resistance r g 1.3 ? switching parameters turn-on delay time t d(on) 6.2 9.3 ns turn-on rise time t r 11 17 ns turn-off delay time t d(off) 23 34 ns turn-off fall-time t f v dd =15 v, v gs =10 v, i d =15 a, r g =12.7 ? 18 27 ns total gate charge q g v dd =15 v, i d =15 a,v gs =5v 8.4 11 nc gate source charge q gs 2.5 3.1 nc gate drain charge q gd v dd =15 v, i d =15 a 6.4 9.6 nc source- drain diode ratings and characteristics inverse diode forward voltage v sd i f =30 a, v gs =0 v 1.1 1.4 v maximum continuous drain-source diode forward current i s 30 a maximum pulsed drain-source diode forward current i sm t c =25c 120 a reverse recovery time t rr 15 18 ns reverse recovery charge q rr v r =15 v,i f = i s , di/dt =100a/s 2 3 nc
utd20n03 power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-342.a ? typical characteristics drain current vs. drain-source breakdown voltage 0 drain current, i d (a) drain-source breakdown voltage, bv dss (v) 0 0.5 0 0 50 drain current vs. gate threshold voltage drain current, i d (a) gate threshold voltage, v th (v) 100 150 200 250 300 50 100 150 200 250 300 10 20 30 1.0 1.5 2.0 40 0 drain current vs. source to drain voltage source to drain voltage, v sd (v) 0 drain current, i d (a) 0.2 0 drain-source on-state resistance characteristics drain current, i d (a) drain to source voltage, v ds (mv) 0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 12 50 100 150 200 12 v gs =4.5v i d =15a v gs =10v i d =15a 250 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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